超导体制备过程中的退火效应和热稳定性的实验研究。
The effects of annealing on superconducting transition and the thermostability of MgB.
重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
在氮气和空气中退火时，随退火温度升高前者表现为红移而后者表现为蓝移，这归属于量子尺寸效应。
The optical absorption edges red-shift along with the increase of annealing temperature under nitrogen and blue-shift under air were observed, which can be attributed to the quantum size effect.
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