辐照对于材料和元器件（包括半导体器件和IC）产生损伤的基本机理是电离损伤和位移损伤。电离损伤主要是在半导体和绝缘体中产生电子-空穴对，需要的能量较低；而位移损伤主要是在半导体中产生晶格空位（即原子离开晶格位置后所留下的空位），需要的能量要高得多。半导体中的这些损伤也就是造成器件和IC的辐照效应的根本原因。
Both the electrical model and noise characterization model of the irradiation damage of Gallium arsenic are proposed. The corresponding parameters for characterization are measured and the characterizing mechanisms are analyzed.
分别建立了砷化镓材料辐照损伤的电学模型和噪声表征模型,提取了相应的表征参量,分析了其表征机制。
参考来源 - 砷化镓基半导体材料抗辐照噪声表征参量研究The primary criterions of the laser irradiation damage, concerning the transmission and reflection light method, the scattered light detection method, and plasma spark method, are studied in our experiments.
结合我们的实验，着重讨论了等离子体闪光、透射反射扫描和散射光的激光辐照损伤判别方法。
参考来源 - 高损伤阈值介质膜层的制备及其研究·2,447,543篇论文数据，部分数据来源于NoteExpress
用慢正电子湮没等分析技术研究了辐照损伤的微观机制。
The microscopic mechanism of irradiation damage of Al film reflector is studied by the slow positron annihilation technique and X-ray diffraction.
光透射测试结果表明了NBW晶体的抗辐照损伤能力强；
The transmission spectra indicate that the NBW crystal has a strong antiradiation damaging feature.
我们用这种方法记录了有机玻璃中激光辐照损伤的全过程。
A whole process of laser induced damage in organic glass has been recorded by this method.
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