此外，我们也在(110)方向的矽基板上作了相同的实验，并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。

Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.

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然后再由专业的织网机经打轴、整径、织网、平网、剪毛边等多道程序而成。

Then by the professional weaving machine, the whole axis diameter, mesh, flat screen, shearing edge and multiprogramming.

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若使共中心点道集内的反射同相轴校平后能够同相叠加， 叠加速度则会出现一些低或高的异常。

In order to in-phase stack of aligned reflection events on CMP gathers, the stack velocities may have some higher or lower anomalies.

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