...m）的可靠性研究-中国论文辅导网 论证了从应力诱导漏电流 （stress-induced leakage current ,SILC）到软击穿（soft breakdown，SBD）和硬击穿 （hard breakdown，HBD）就是一个缺陷密度连续增加并且缺陷的势垒高度不断下降...
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Secondly, soft breakdown characteristics of BST thin film are investigated.
其次,研究了BST薄膜的软击穿特性。
参考来源 - BST薄膜漏电流与软击穿特性研究The mechanism of soft breakdown of BST thin films was discussed.
并探讨了BST薄膜软击穿的物理机制。
参考来源 - BST热释电薄膜漏电流特性及软击穿特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
软击穿时间由衬底电流随时间的弛豫特性和器件输出特性测量时监测的衬底电流突变确定。
The time to soft breakdown (t BD ) is obtained by the relaxation characteristics of the I sub with time and by monitoring the breaks of the I sub when measuring the output characteristics.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
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