光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
观测到11H、22H、33H和11L等激子跃迁结构。 计及晶格失配导致的应力效应，对子能级结构进行了理论计算。
The heavy and light hole excitonic transition structures 11H, 22H, 33H and 11L were observed and the theoretical calculations , including the strain effects, were performed.
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