Electromigration effect is still a dominating failure mechanism of interconnect for deep submicron and ultra-deep submicron scale.
在深亚微米和超深亚微米条件下，互连线失效仍然是电路失效的主要因素之一。
参考来源 - 集成电路软故障与成品率相关技术研究·2,447,543篇论文数据，部分数据来源于NoteExpress
本文针对超深亚微米通用微处理器中的多级tlb设计开展研究。
This research focuses on multi level set associative TLB performance of the general purpose microprocessor.
光刻校正技术已成为超深亚微米下集成电路设计和制造中关键的技术。
The optical lithography correction techniques become key technologies in the IC designing and manufacturing of VDSM.
超深亚微米ic设计中互连线的串扰情况与详细布线方案和信号波形密切相关。
In IC design under VDSM technology, the crosstalk situation of interconnecting is related nearly with the scheme of detailed routing and the waveforms of signals.
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