在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
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