本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。

Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.

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该文从衬底损耗、金属损耗及邻近效应出发，首次提出了一种提高并联集成电感性能的方法。

The paper initiates a method for improving capability of parallel connected spiral inductor based on substrate loss, metal loss and proximity effects.

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衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应，严重地影响了模拟电路的性能。

Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal performance of the analog circuits.

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