... substrate dicing saw 衬底切割锯 substrate diffusion 衬底扩散 substrate film 衬底膜 ...
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结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
当少子扩散长度与衬底厚度的比值为2.5-3时，具有铝背场结构的单晶硅电池可获得最佳的输出特性。
When the ratio of minority carriers'diffusion length to the substrate thickness is about 2.5 to 3, the crystalline silicon cells with an Al-BSF can gain the optimal output performance.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The deposition rate increases with the increasing of bias voltage pressure.
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