在讨论不同结构的LDMOS表面势和表面电场模型时，本文采用多种方法求解泊松方程。
A variety of methods are employed to solve Poisson equation when discussing on the surface potential and surface electric field models of LDMOS with different structures in this paper.
从薛定谔方程和泊松方程的自洽计算中得到了新的二维表面态。
The Schrdinger equation and Poisson equation are solved self-consistently to calculate the new two dimensional surface states.
模型包括离子连续性方程、动量方程和泊松方程，特别是提出了可以自洽地决定绝缘基板表面电势、表面电荷密度和鞘层厚度关系的等效电路方程。
The equivalent circuit model gives the instantaneous relationship between the sheath thickness and the surface potential at an insulating substrate placed on the pulse-biased electrode.
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