本文将分析一种用于对这种JFET背栅电平进行动态稳定控制的电路。
This paper is going to analyze a control circuit to stabilize dynamically the electrical level in JFET back grid.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
论文分析了SOI MOSFET器件的结构及不同前、背栅压的条件下薄膜双栅SOI MOSFET的器件特性；
Firstly, an analysis of the structure of various SOI MOSFET and their characteristics under conditions of different front and back gate-voltage are made.
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