快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。
The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
延长退火时间，缺陷密度增加。
With increasing annealing time, the density of defects increases.
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