... 生长横推断层 growth transcurrent fault 缓冲层生长 Buffer Layer Growth 层积生长 accumulated growth ...
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主要考察了氮化温度和氮气流量对缓冲层生长的影响。
The influence of nitridation temperature and nitrogen flow rate on the growth of buffer layers is emphasized.
总结起来就是非晶层成分的变化以及结构的缓冲导致SBN薄膜能以最低的能量生长。
This amorphous layer can serve as the buffer layer of the subsequent growth of the top SBN60 films and result in the high orientation of it.
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