消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
开关元件可以形成于像素区域中的绝缘衬底上，像素区域由彼此相邻的栅极线和数据线限定。
The switching element may be formed on the insulating substrate in a pixel region defined by gate and data lines adjacent to each other.
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