一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。
An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
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