发现薄膜中晶粒的结晶取向、晶粒大小和晶粒边界条件直接影响其电畴的形态复杂程度。
It was revealed that the crystallographic orientation, dimensional sizes and boundaries of ferroelectric grains significantly affect the domain structures of thin films.
研究了快速成膜技术中热分解温度对薄膜结晶取向的影响，分析了在相同退火条件下，分别采用不同热分解温度制备得到的薄膜的结晶状况。
To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition.
采用＂中断法＂研究了取向硅钢二次再结晶过程中的异常长大行为，确定了二次再结晶发生的温度范围。
The secondary recrystallization and its temperature range of grain oriented silicon steel have been studied by the method of interrupting secondary recrystallization annealing.
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