研究了电子-体纵光学声子弱耦合情况下，抛物量子点中激子的性质。
Numerical calculations are performed for GaAs semiconductor as a example and the results show that the mean number of optical phonons of weak-coupling exciton decrease with the.
有不少的极性晶体，电子与体纵光学声子的耦合弱，但与表面光学声予的耦合强。
There is a weak bulk coupling but a strong surface coupling between the electrons and phonon for many polar crystals.
有不少极性半导体，电子与体纵光学声子的耦合弱，但与表面光学声子的耦合强。
There isa weak bulk coupling but a strong surface coupling between electrons and phonons for many ionic crystals.
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