国家奈米元件实验室 NDL
奈米元件 Nano DEVICE
米元件实验室 National Nano Device Laboratories
纳米元件实验室 Public Nano Device Laboratories
米光电元件制作的挑战 Challenges of Nano-Optic Device Fabrication
米线电子元件 Nanowire electronics
奈米碳管电子元件 CNT Device
碳奈米管制成的元件 switching with nanotubes
新世代奈米材料及元件 Nanostructure Based Meta-Materials and Devices
因此对一个元件设计者而言非常不容易预测及厘 清单电子电晶体及分子电晶体的穿隧电流，从而 使得奈米元件电路难以成真。
Consequently, it is hard for designers to predict and clarify the tunneling current of SETs (MTs), making the realization of nano- device circuit extremely difficult.
目前最先进的芯片制造工艺为30纳米，这意味着芯片元件的平均尺寸为300亿分之一米。
The current state of the art for chip manufacturing is 30 nanometers, which means the average size of a chip component is just 30 billionths of a meter across.
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