英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
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