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第一栅极与第二栅极分离。
The first gate is separated from the second gate.
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第一栅极及第二栅极分开配置于所述基底上。
The first gate and the second gate are separately disposed on the substrate.
此外，第一栅极与第二栅极的共用掺杂区域配置于基底中。
Furthermore, the common doped region of the first gate and the second gate is disposed in the substrate.
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