目的探讨十二指肠残端漏的治疗方法。
最后得出了端部磁场矢量分布图，端部漏抗值及端部绕组的电磁力分布规律。
Finally vector distribution map, end region leakage reactance and distribution of force on end region winding are achieved.
由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
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