讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
本文改进了半导体两带模型，计算了窄禁带半导体的非线性极化率。
The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper.
应用推荐