在穿透层内有一指数衰减的屏蔽电荷分布，其符号与超导体表面由运动感生的电荷相反、数量相等。

There will be shielding charges in the penetration layer with a exponential distribution. The shielding charge has opposite sign and equal amount to the surface induced charge caused by moving.

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他们能穿透防护层并寄居在半导体中，在那里，它们能产生破坏电子器件的电涌。

They penetrate shielding and get deposited in semiconductors, where they can create electrical surges that damage electronics.

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但是，超压冲击波必然会穿透坚固的铠甲层。

But the overpressure wave inevitably passes through the rigid armor layer.

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