对锑化铟-铟共晶薄膜磁阻元件的齿轮转速传感器电路进行了研究。
The gear velocity sensor made up of a InSn-In eutectic film magnetoresistor(MR) is studied.
本文论述了磁阻元件的理论基础，介绍了旋转传感器的工作原理与结构设计，给出了测试结果和应用前景。
In This paper, the fundamentals of magneto resistor 's operating principle and structure design of a sensor for measuring rotator are presented, and its measurement results and applications are given.
所述磁场发生器可以优选地通过激励线圈(11,13)实现，所述传感器元件(12)通过磁阻元件，例如gmr元件实现。
The magnetic field generators may preferably be realized by excitation wires (11, 13) and the sensor element (12) by a magneto-resistive element, for example a GMR element.
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