串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。

A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.

youdao

通过直流栅电压的作用室温时产生负电阻效应。

The applied gate voltage gives rise to negative differential resistance (NDR).

youdao

当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。

While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.

youdao