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将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。
Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.
这两个栅和场氧化层都是通过热氧化过程生长出来的，因为只有热氧化才可以提供具有低陷阱密度性能最好的氧化层。
Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
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