...ation) 和光子密度速率方程式 (photon rate equation) 的数值分析运算，并考量其热效应、 漏电流效应 ( leakage current effect ) 、电流散布效应 (current spreading effect) 和载子扩散效应 (carrier diffusion effect) 而模拟出输出功率的多模暂态响应、光...
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工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。
The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文设计了一种基于堆栈效应的漏电流模拟器，并提出了通过该模拟器，利用测试向量中特有的不确定位以优化测试中静态功耗的方法。
Using the simulator, we give a method based on the don t care bits in the test vectors to optimize the static test power.
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