针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
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