...率金属氧化物半导体场效晶体管结构，其在组件 单一记忆单元的源极接点区加入一沟道式电场屏护设计，可达到浅结(shallow junction)低导通电阻，此外利用源极接点区下重掺杂区结分布的改变而可保..
基于152个网页-相关网页
·2,447,543篇论文数据，部分数据来源于NoteExpress
管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
应用推荐