本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的 基本长度被缩短以微型化半导体装置。

The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.

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当C4的不负责，充分(下侧达到接近0 V)，P沟道MOSFET六题是开启，有效地缩短了汽车，和作为一个制动。

When C4 does charge fully (the lower side reaches close to 0v), the P-channel MOSFET Q6 is turned on, effectively shorting out the motor, and acting as a brake.

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