石墨烯基电子学研究进展 关键词： GaN；氮化层；GaAs；氢化物气相外延（HVPE） ；XRD [gap=1420]Key words:GaN；nitride layer；GaAs；HVPE；XRD
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导致剥落的疲劳裂纹开始于表面缺陷和氮化层与心部交界处。
Cracks leading to spalling were initiated at surface defects and boundaries between nitriding layes and the core.
利用sem, XRD, XPS研究氮化层的显微组织、表面成分、结构。
The microstructure, surface composition and structure were investigated by SEM, XRD and XPS.
试验结果表明，含镧的氮化层的韧性和抗冲蚀磨损性能明显优于普通氮化层。
The results show that rare earth element La helps to improve the microstructure of nitrided layers by way of micro alloying effect which is dependent on its permeation into the nitrided layers.
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