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采用无质量分析器的离子注入机，以低能量低剂量注水的方式代替常规SIMOX注氧制备soi材料。
An implanter without ion mass analyzer was used to fabricate thin SOI materials by low energy and low dose water ions implantation instead of conventional SIMOX.
通过对铅玻璃和石英玻璃的X射线光电子能谱的详细研究，发现硼离子注入后氧和硅的结合能峰稍有位移。
Based on the study of X-ray photoelectron spectroscopy of lead glass, it is found that the binding energy peaks of oxygen and silicon slightly shifted after implantation.
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