提出了一个用于分析SITH正向阻断态的新模型。
这样，当晶闸管重新处于正向阻断状态(器件处于可控时间)，使得门极变得可控。
This allows the gate to regain control in order to turn the device on at some controllable time after it has again entered the forward blocking state.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
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