栅电阻 gate resistance
栅极电阻 gird resistance ; RG ; grid resistance ; band attrition
栅极电阻器 [电子] grid resistor
栅漏电阻 grid leak resistor ; grid lead resistance ; grid-leak resistance ; rGD
栅极铁电阻器 iron grid resistance
微栅型电阻应变计 micro-grid resistance strain gauge ; grid resistance strain gauge
栅网电阻元件 [电] Grid Element
栅极铸铁电阻器 cast grid resistor
栅极抑振电阻器 grid suppressor
栅偏压电阻 CB resistor
通过直流栅电压的作用室温时产生负电阻效应。
The applied gate voltage gives rise to negative differential resistance (NDR).
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
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