... gate-oxide 栅氧 gate oxide integrity 栅极氧化层的完整性 gate oxide leakage 栅氧化层泄漏 ...
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因为特征尺寸的缩小意味着栅氧层的变薄，更小的电压就能够击穿器件的栅氧层；
The smaller feature size means thinner gate oxide, smaller voltage that gate oxide can endure.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
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