它采用四极枪结构，两个栅极，第一栅极采用双层同心球面网，第二栅极外还添加了屏蔽筒。
The first grate has double spherical nets with the same center and outside the second one there is a shield cylinder to make electron congregate.
该耗尽模式部分由该第二栅极栅控，并且适于工作于耗尽模式且可屏蔽该第一栅极免受电压负荷影响。
The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
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