如果一个或多个基础方程是非线性的，例如在应用二极管的场合，那么整个系统也就成了非线性的。
If one or more elemental equations are nonlinear, as is the case for a diode, then the overall system is nonlinear.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
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