在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方 法。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
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