到那个时候，由于控制电流的晶体管门(transistor gate)以及氧化栅极(gate oxide)距离将非常贴近，因此，将发生电子漂移现象(electrons drift)。
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晶体管门电路 crystal gate
互补晶体管门 [电子] complementary transistor gate
直接耦合晶体管逻辑门 dctl gate
二极管晶体管逻辑门 diode transistor logic gate
晶体管-晶体管逻辑门 transistor-transistor logic gate
三门晶体管 Tri-gate Transistor
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
按照这种方法，罗格斯已经设计出了一个完整的电路，这个电路包含晶体管，逻辑门器件和震荡器。
Dr Rogers has designed entire circuits based on this principle, with working transistors, logic gates and oscillators.
同样，那些用来组成晶体管逻辑门和互连的结构图也是手工绘制的。
Similarly, the drawings representing the structures used to form the transistor logic gates and interconnects were done by hand.
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