此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
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