这些负号位错将移至裂纹顶端并使之钝化而留下一个无位错区或低位错密度区。
These negative dislocations seem to enter the crack tip and blunt it, resulting in a dislocation-free zone at the crack tip.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
无碱基位损伤可作为诱导性易错修复功能的靶损伤。
Apurinic sites are the proper substrates of the inducible error-prone repair activity.
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