作为评价触头的性能，不能单一地比较其燃弧时间的长短，尚应全面评价其分断电弧能量和材料侵蚀率。
When we evaluate the property of contact materials, we should not only compare thier arc time, but also compare thier erosion rate of materials and arc energy.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
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