将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。

Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.

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此外，掺氮对直拉硅氧沉淀熟化的影响还有待揭示。

Moreover, the effect of nitrogen-doping on the Ostwald ripening of oxygen precipitates is yet to be revealed.

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采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。

The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.

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