For 0.15μm to 0.065μm CMOS process,the traditional method is to use nitrogen-doped silicon oxide as gate dielectric.
在0.15μm至0.065μm的CMOS工艺中,通常的做法是在氧化层中掺氮。
参考来源 - 掺氮氧化硅栅介质对0.13um CMOS器件1/f噪声特性影响的研究Moreover,the effect of nitrogen-doping on the Ostwald ripening of oxygen precipitates is yet to be revealed.
此外,掺氮对直拉硅氧沉淀熟化的影响还有待揭示。
参考来源 - 直拉硅单晶中氧沉淀的熟化The resonant Raman scattering intensity of the 1LO phonon in N-doped ZnO increased to 3 times as strong as that of undoped ZnO, which mainly arose from the defect-induced Raman scattering caused by N doping.
表现在共振拉曼散射光谱中,掺氮后氧化锌1LO声子的强度增大至未掺杂时的3倍,这主要是由氮掺杂产生的“缺陷引起的拉曼散射”作用的结果。
参考来源 - 掺氮氧化锌的光电特性及其在薄膜晶体管中的应用研究·2,447,543篇论文数据，部分数据来源于NoteExpress
本文还提出了液相掺氮碳膜生长的化学机制。
And, schemes of the film growth in the liquid phase were suggested.
此外，掺氮对直拉硅氧沉淀熟化的影响还有待揭示。
Moreover, the effect of nitrogen-doping on the Ostwald ripening of oxygen precipitates is yet to be revealed.
对所制备的掺氮非晶碳薄膜用光电子能谱和红外光谱进行了表征。
The nitrogen containing films are also studied by using XPS spectra and IR spectra.
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