... 掺杂密度 doping density 掺杂分布 doping distribution 掺杂面 doping front ...
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...流功耗的主要成分与工艺参数和 工作环境——比如工艺的几何尺寸（沟道长度、栅氧厚度等）、工作电压、掺杂分布（doping profile），温度等密切相关［71。
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A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been proposed. The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.
该文提出了多晶硅薄膜晶体管的一种Halo LDD新结构，Halo LDD结构能够有效地抑制短沟道效应，合理的Halo区掺杂分布会极大地改善小尺寸器件性能。
参考来源 - Halo LDD P·2,447,543篇论文数据，部分数据来源于NoteExpress
快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。
The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
采用电镜、能谱、X射线衍射分析、粒度分析等方法研究了掺杂钨粉的粒度及稀土元素的分布。
The particle size of doped tungsten and distribution of rare earth were studied by means of SEM, EDS, XRD and granularity analysis.
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