最后，给出了用本法对两种正性电子抗蚀剂选择最佳曝光剂量的结果和制作的大规模集成电路掩模版的照片。
Finally, the results of selecting the optimum exposure dose for two kinds of electron positive resists and the photos of LSI masks fabricated by this method are given.
概述了不使用光致掩模和光致抗蚀剂的无掩模布线形成技术，金属纳米粒子和纳米油墨的研究开发，喷墨法的应用和今后的课题。
This paper describes the maskless wiring formation technology not using photomask and photoresist, development of metal nano particle and nano ink, application of the inkjet method and future theme.
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