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相对的，假如射极突出部太薄，将无法有效抑制表面复合电流。
In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface.
通过理论分析得到扩散电流和产生复合电流是实验芯片的主要电流机制；
Theoretical analyses show that the main current mechanisms of the diodes are diffusion current and gr current.
计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响。
The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed.
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