... equidistant firing control 等间隔触发控制 equilibrium carrier 平衡载流子 equilibrium mode distribution 平衡模（式）分布 ...
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非平衡载流子寿命 [电子] nonequilibrium carrier lifetime
非平衡载流子 non-equilibrium carrier
非平衡载流子浓度 [电子] nonequilibrium carrier concentration
平衡多数/少数载流子 Equilibrium majority /minority carriers ; Equilibrium majority
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文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。
Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained.
介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
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