当反常共振峰频率与正常共振峰靠近时，在内耗-振幅或内耗-时间图上呈现峰值效应。
Peaking effects were found on the plot of internal friction vs strain amplitude or time when the resonant frequency of anomalous peak closed to the normal one.
所谓的Slashdot效应可以帮助获得一个好的想法，仅仅因为很难预测加载峰值。
The so-called Slashdot effect can crater a good idea, simply because it's hard to predict load spikes.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
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