层错常常发生在外延生长的硅单晶体上,当硅单晶片经过900~1200℃热氧化过程后,经常可发现表面出现层错。这些由氧化过程引起的层错,称之为OISF。因为每个层错都结合着部分位错,所以层错对硅单晶片的电性质影响与位错相似。
Al-Li-Cu-Zr合金时效过程中形成的层错调制结构 - TNMSC 关键字: Al-Li基合金 相变 层错[gap=616]Key words: Al-Li based alloy; phase transformation; stacking fault
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堆垛层错 [晶体] stacking fault ; SISF ; [地质] fault
孪晶层错 twin fault
堆垛层错能 stacking fault energy
外来层错 extrinsic stacking fault
非本昭垛层错 extrinsic stacking fault
断层错动 Fault Movement ; faulting ; movement of fault ; fault dislocation
堆跺层错密度 concentration of stacking faults
层错断片 faulted segment
次序层错 sequential fault
Nb additions promoted the formation of lamellar structure and a large amount of stacking faults and dislocations, but did not change the thickness of the lamella.
Nb的添加促进了快速凝固TiAl基合金中堆垛层错和位错等缺陷的形成。
参考来源 - 快速凝固TiAl基合金的组织演变研究·2,447,543篇论文数据,部分数据来源于NoteExpress
还观察到层错象中的位错。
Dislocations within the stacking fault image were also observed.
在垂直于晶须生长方向上没有层错的存在。
There was no stacking fault in the direction perpendicular to the growth orientation.
在碳化物颗粒附近只观察到奥氏体变体和层错。
Only strip austenite substructure and stacking fault were observed around the carbides.
So many particulars, so many questions."
历史层云,波谲反复,疑丛错错,静待解读
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